发明名称 |
METHOD FOR FORMING A DIELECTRIC LAYER IN A SEMICONDUCTOR DEVICE BY USING ETCH STOP LAYERS |
摘要 |
The invention provides a method for forming a dielectric layer in a semiconductor device by using etch stop layers, and a semiconductor structure formed by the method. The method in accordance with the invention comprises: providing a semiconductor substrate having raised portions and recessed portions; forming a first etch stop layer covering the raised portions and the recessed portions; forming a dielectric layer covering an upper surface of the first etch stop layer, wherein the dielectric layer has a thickness substantially smaller than that of each of the raised portions; forming a second etch stop layer covering the dielectric layer; and performing a planarizing step for polishing the second etch stop layer and the dielectric layer until exposing the first etch stop layer on an upper surface of the raised portions, and remaining a plurality of remaining portions of the second etch stop layer on the planarized surface, and remaining the dielectric layer between raised portions.
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申请公布号 |
US2002055202(A1) |
申请公布日期 |
2002.05.09 |
申请号 |
US20010929098 |
申请日期 |
2001.08.15 |
申请人 |
YANG CHIH-SHENG;TSAI KUEI-CHANG;SHU CHIH-HUNG;OUYANG YUN-LIANG |
发明人 |
YANG CHIH-SHENG;TSAI KUEI-CHANG;SHU CHIH-HUNG;OUYANG YUN-LIANG |
分类号 |
H01L21/3105;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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