| 摘要 |
PURPOSE: A method for fabricating a titanium nitride layer of a capacitor is provided to control a loss of a leakage current, by reducing a loss of a Ta2O5 thin film caused by reaction of Ta2O5 and NH3. CONSTITUTION: A tantalum oxide layer(3) is deposited on a silicon(1) substrate having a predetermined lower structure. The titanium nitride layer is deposited by a chemical vapor deposition(CVD) method using N2 and H2 together with TiCl4 source. A CVD process using TiCl4 source and NH3 is performed regarding the resultant structure to deposit a titanium nitride.
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