发明名称 METHOD AND APPARATUS FOR MAKING THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method and an apparatus for making thin film capable of using an inexpensive metalic target material and forming oxide transparent conductive film at low cost by improving utility efficiency of the target materials. SOLUTION: The oxide transparent conductive film which contains In-O, Sn-O or Zn-O as basic oxides, is formed on a substrate 14 by the reactive sputtering method with using the metalic target material 10 which contains In, Sn or Zn in a vacuum as basic elements. The target material 10 is melted by heating in making film and the sputtering is made with giving a fixed electric field to a liquid state of the target material 10.
申请公布号 JP2002129315(A) 申请公布日期 2002.05.09
申请号 JP20000322059 申请日期 2000.10.23
申请人 ULVAC JAPAN LTD 发明人 ISHIBASHI AKIRA
分类号 C23C14/34;C23C14/08;H01L21/203;(IPC1-7):C23C14/34 主分类号 C23C14/34
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