发明名称 |
METHOD FOR DEVELOPING PHOTORESIST |
摘要 |
PROBLEM TO BE SOLVED: To prevent decrease in the yield of products as much as possible and to suppress variation in the line width of photoresist patterns as much as possible. SOLUTION: The method includes repeated processes of applying a developer on an exposed photoresist layer from one end to the other end so as to form a puddle made of the developer on the photoresist layer. At least one process time of forming the puddle in the second or succeeding turns is longer than the process time of forming the first puddle. |
申请公布号 |
JP2002131929(A) |
申请公布日期 |
2002.05.09 |
申请号 |
JP20000325401 |
申请日期 |
2000.10.25 |
申请人 |
TOSHIBA CORP |
发明人 |
KAMATA YOSHITAKA;MATSUURA YUKI |
分类号 |
G03F7/30;H01L21/027;(IPC1-7):G03F7/30 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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