| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a tungsten/silicon layer and silicon nitride layer to prevent abnormal oxidation of the tungsten/silicon layer, successively on a same table. SOLUTION: This method comprises providing a table of chemical vapor deposition, carrying out the first growing process for forming a tungsten/silicon layer on a semiconductor substrate after inserting the substrate in a vacuum reaction chamber on the above table, and then carrying out the second growing process of forming a silicon nitride layer on the above tungsten/silicon layer in the vacuum reaction chamber on the above table.
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