| 发明名称 |
Sidewall process to improve the flash memory cell performance |
| 摘要 |
A method of forming a FLASH memory device having a conductive line (24) which crosses a trench isolation structure (70). The method involves forming nitride sidewalls (125) to protect the stack during the SAS etch process.
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| 申请公布号 |
US2002055228(A1) |
申请公布日期 |
2002.05.09 |
| 申请号 |
US20010952468 |
申请日期 |
2001.09.14 |
| 申请人 |
AMBROSE THOMAS M.;MEHRAD FREIDOON;YUAN JESSIE |
发明人 |
AMBROSE THOMAS M.;MEHRAD FREIDOON;YUAN JESSIE |
| 分类号 |
H01L21/28;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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