| 摘要 |
PURPOSE: A method for fabricating a gate electrode of a semiconductor device is provided to prevent a re-distribution phenomenon caused by silicon migration of doped polysilicon, by ion-implanting silicon atoms to form a barrier layer on the interface between tungsten and the doped polysilicon. CONSTITUTION: A gate oxide layer(22) is formed on a semiconductor substrate(21). The doped polysilicon(23), tungsten nitride and tungsten(25) are sequentially formed on the gate oxide layer. Silicon atoms are ion-implanted into the tungsten nitride so that the profile of the silicon atoms has a peak value. The tungsten, the tungsten nitride and the doped polysilicon are selectively patterned to form a gate electrode of a stacked structure. A heat treatment process is performed regarding the entire surface to form a barrier having ion-implanted silicon atoms on the interface between the tungsten and the doped polysilicon.
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