| 摘要 |
PURPOSE: A method for fabricating an end cap of a semiconductor device is provided to reduce a design rule necessary for the end cap of a transistor, by performing an etch process using the first and second mask layers or by forming a spacer made of a gate material, so that the size of the end cap is increased and spacing is reduced. CONSTITUTION: A conductive layer is formed on a semiconductor substrate(21). The first mask layer is formed on the first conductive layer. The first mask layer is patterned to form a line-type hole pattern exposing a subsequent end cap region. The line-type hole pattern is used to etch the conductive layer. The second mask layer is formed on the etched conductive layer. The second mask layer is patterned in a direction vertical to the line-type hole pattern to form a bar-type pattern. The conductive layer is patterned to form a gate line by using the bar-type pattern.
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