SEMICONDUCTOR EPITAXIAL WAFER HAVING CONTROLLED DEFECT DISTRIBUTION AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor epitaxial wafer having a controlled defect distribution is provided to reduce a stack defect or hillock in forming a subsequent epitaxial layer, by sufficiently guaranteeing a denude zone near the surface of a wafer substrate while the wafer substrate where a gettering region having a sufficient gettering effect in a bulk region is distributed is formed. CONSTITUTION: The denude zone(14a,14b) having no crystal defect is formed in a surface region positioned in a predetermined depth from the surface of the wafer substrate(10). The gettering region(12) is formed in the bulk region except the denude zone of the wafer substrate. The epitaxial layer(16) is formed on the wafer substrate. The distribution of the denude zone of the wafer substrate is vertically symmetrical.