Electrode structure of a carrier substrate of a semiconductor device

摘要

It is an object to provide an electrode structure for a carrier substrate 102 for a semiconductor device in which the strength and the reliability of the joint portion between an electrode of a semiconductor package and an electrode of a main substrate 201 is improved. A soldering land 103 that is an electrode of a carrier substrate 102 is hemispheric having a concentric hemispheric face hollow portion thereinside, a flange portion is provided on the circumferential portion thereof. Two slits 104 are provided in the flange portion and parts of a wall surface adjacent to the flange portion for venting air. A hemispheric face recess is provided in the carrier substrate 102 toward an outer surface, and the soldering land 103 is fixedly attached to the carrier substrate 102 so that the soldering land 103 is fitted into the recess and the flange portion abuts the outer surface of the carrier substrate 102. Further embodiments include cylindrical electrodes and cylindrical recesses.