发明名称 Planar resonant cavity enhanced photodetector
摘要 <p>A planar-type, bottom-illuminated resonant cavity enhanced (RCE) photodetector is provided. A resonant cavity with a first mirror and a second mirror is disposed within a planar-type, bottom-illuminated photodetector. The light-absorbing layer of the bottom-illuminated, planar type photodetector is sandwiched between the first mirror and the second mirror of the resonant cavity structure of the photodetector. At least one of the first mirror and the second mirror of the resonant cavity is made from a high reflectivity metal such as gold or silver instead of a Distributed Bragg Reflector (DBR) thereby simplifying the fabrication process. This device combines the excellent reliability capabilities of a planar diode with a high bandwidth and quantum efficiency resonant cavity enhanced photodetector. Yet the device processing is robust enough for high manufacturing volumes. <IMAGE></p>
申请公布号 EP1204148(A2) 申请公布日期 2002.05.08
申请号 EP20010308795 申请日期 2001.10.16
申请人 AGERE SYSTEMS OPTOELECTRONICS GUARDIAN CORPORATION 发明人 ONAT, BORA M.
分类号 H01L31/10;H01L31/0232;H01L31/105;H01L31/107;(IPC1-7):H01L31/105;H01L31/023 主分类号 H01L31/10
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