Non-volatile semiconductor memory device

摘要

A non-volatile semiconductor memory device is provided which is capable of shortening time required for determining a reading voltage in its reading circuit and of improving a data reading speed. The non-volatile semiconductor memory device has a feedback-type bias circuit (1) for letting currents to flow, in response to a first timing signal occurring when an address of a memory cell is selected from a load circuit (2) to the memory cell to be connected to a bit line through a bit line decoder according to selection of the address and to be connected through a word line, causing a predetermined bias current to be supplied to the bit line and for letting a current to flow in accordance with an ON-state or OFF-state of the memory cell, causing a reading voltage to be produced at a connection point with the load circuit (2) and a pre-charging circuit (3A) for letting currents to flow through the bit line in response to a second timing signal occurring in an early stage when the first timing signal is active and for interrupting currents flowing through the bit line in a last stage when the second timing signal is active.