| 发明名称 |
Method of forming an ultrathin SiO2 layer using N2O as the oxidant |
| 摘要 |
<p>N2O is used as the oxidant for forming an ultra-thin oxide (14). The low oxidation efficiency of N2O compared to O2 allows the oxidation temperature to be raised to greater than 850 DEG C while maintaining the growth rate. A cold wall lamp heater rapid thermal process (RTP) tool limits reaction to the surface of the wafer (10). Hydrogen is preferably added to improve the electrical properties of the oxide (14). <IMAGE></p> |
| 申请公布号 |
EP1204135(A2) |
申请公布日期 |
2002.05.08 |
| 申请号 |
EP20010000591 |
申请日期 |
2001.11.02 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROTONDARO, ANTONIO L.P. |
| 分类号 |
C01B33/12;H01L21/28;H01L21/31;H01L21/316;H01L29/51;H01L29/78;(IPC1-7):H01L21/316 |
主分类号 |
C01B33/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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