发明名称 OUTPUT BUFFER CIRCUIT OF RAMBUS DRAM
摘要 PURPOSE: An output buffer circuit of a Rambus DRAM is provided, which operates stably, by obtaining a desired output swing width by increasing a current flowing in a channel of an output driver for an initial fixed period during a read operation. CONSTITUTION: Output driver parts(P1,N1) input data read from a memory cell(2) during a read command. The first and the second pull-down switching part(N2,N3) discharges a voltage of a data output pad as a ground voltage(Vss) by output signals of the output driver parts and a control signal and are connected serially each other. A pulse generator part(4) generates a pulse signal for an initial fixed period during the read command. And a PMOS transistor(P2) supplies an external voltage(Vext) to a gate of the first pull-down switching part.
申请公布号 KR20020034019(A) 申请公布日期 2002.05.08
申请号 KR20000064709 申请日期 2000.11.01
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SAM SU;LIM, JEONG DON
分类号 G11C11/40;(IPC1-7):G11C11/40 主分类号 G11C11/40
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