发明名称 Micro-dynode integrated electron multiplier
摘要 A microdynode electron multiplier provides numerous microchannels extending parallel to one another through a layered structure incorporating insulating spacer layers and dynode layers which either incorporate a conductive electrode layer or are contiguous with a conductive electrode layer. The dynode layers include materials with high electron emissivity. The dynode layers can be biased to different electrical potentials to provide a potential gradient along the length of each microchannel. Multi-stage electron multiplication provides high gain. The device desirably is formed as a monolithic, sealed structure with a cathode structure such as a photocathode and an anode structure. The device can provide a multi pixel imaging device of extremely high sensitivity and resolution.
申请公布号 US6384519(B1) 申请公布日期 2002.05.07
申请号 US19970960759 申请日期 1997.10.30
申请人 NANOSCIENCES CORPORATION 发明人 BEETZ, JR. CHARLES P.;STEINBECK JOHN;BOERTSLER ROBERT W.;WINN DAVID R.
分类号 H01J43/22;(IPC1-7):H01J43/20 主分类号 H01J43/22
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