发明名称 |
Micro-dynode integrated electron multiplier |
摘要 |
A microdynode electron multiplier provides numerous microchannels extending parallel to one another through a layered structure incorporating insulating spacer layers and dynode layers which either incorporate a conductive electrode layer or are contiguous with a conductive electrode layer. The dynode layers include materials with high electron emissivity. The dynode layers can be biased to different electrical potentials to provide a potential gradient along the length of each microchannel. Multi-stage electron multiplication provides high gain. The device desirably is formed as a monolithic, sealed structure with a cathode structure such as a photocathode and an anode structure. The device can provide a multi pixel imaging device of extremely high sensitivity and resolution.
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申请公布号 |
US6384519(B1) |
申请公布日期 |
2002.05.07 |
申请号 |
US19970960759 |
申请日期 |
1997.10.30 |
申请人 |
NANOSCIENCES CORPORATION |
发明人 |
BEETZ, JR. CHARLES P.;STEINBECK JOHN;BOERTSLER ROBERT W.;WINN DAVID R. |
分类号 |
H01J43/22;(IPC1-7):H01J43/20 |
主分类号 |
H01J43/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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