发明名称 |
Voltage variable resistor from HBT epitaxial layers |
摘要 |
A voltage variable resistor formed on heterojunction bipolar transistor epitaxial material includes a current channel made on emitter material. Emitter mesas separated by a recess provide the contacts for the voltage variable resistor. Each mesa is topped with emitter metal forming the resistor contacts. The emitter mesas are layered on top of the current channel that is layered atop of a base layer. The voltage variable resistor's control contact is provided by a base contact located on the base layer and separated from the current channel.
|
申请公布号 |
US6384433(B1) |
申请公布日期 |
2002.05.07 |
申请号 |
US20000533138 |
申请日期 |
2000.03.23 |
申请人 |
RF MICRO DEVICES, INC. |
发明人 |
BARRATT CURTIS A.;GEISSBERGER ARTHUR E.;KAPITAN LARRY W.;FRESINA MICHAEL T.;VASS RAMOND JEFFREY |
分类号 |
H01L29/8605;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/8605 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|