| 发明名称 |
Chemical vapor deposition precursors |
| 摘要 |
Zirconium precursors for use in depositing thin films of or containing zirconium oxide using an MOCVD technique have the following general formula: Zrx(OR)yL, wherein R is an alkyl group; L is a beta-diketonate group; x=1 or 2; y=2, 4 or 6; and z=1 or 2.
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| 申请公布号 |
US6383669(B1) |
申请公布日期 |
2002.05.07 |
| 申请号 |
US19990423750 |
申请日期 |
1999.12.01 |
| 申请人 |
THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND |
发明人 |
LEEDHAM TIMOTHY J;JONES ANTHONY C;CROSBIE MICHAEL J;WILLIAMS DENNIS J;WRIGHT PETER J;LANE PENELOPE A |
| 分类号 |
C07F7/00;C23C16/40;(IPC1-7):B05D5/12;C23C16/06 |
主分类号 |
C07F7/00 |
| 代理机构 |
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