发明名称 Method of dehydroxylating a hydroxylated material and method of making a mesoporous film
摘要 The present invention is a method of dehydroxylating a silica surface that is hydroxylated having the steps of exposing the silica surface separately to a silicon organic compound and a dehydroxylating gas. Exposure to the silicon organic compound can be in liquid, gas or solution phase, and exposure to a dehydroxylating gas is typically at elevated temperatures. In one embodiment, the improvement of the dehydroxylation procedure is the repetition of the soaking and dehydroxylating gas exposure. In another embodiment, the improvement is the use of an inert gas that is substantially free of hydrogen. In yet another embodiment, the present invention is the combination of the two-step dehydroxylation method with a surfactant templating method of making a mesoporous film.
申请公布号 US6383466(B1) 申请公布日期 2002.05.07
申请号 US19980222569 申请日期 1998.12.28
申请人 BATTELLE MEMORIAL INSTITUTE 发明人 DOMANSKY KAREL;FRYXELL GLEN E.;LIU JUN;KOHLER NATHAN J.;BASKARAN SURESH
分类号 C01B37/02;H01L21/316;(IPC1-7):C01B33/159 主分类号 C01B37/02
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