发明名称 Method of reducing dishing and erosion using a sacrificial layer
摘要 Chemical mechanical polishing (CMP) is known to cause dishing when the surface being planarized includes a wide trench partially filled with metal. This problem has been overcome by first filling the trench with a material whose polishing rate under CMP is similar to that of the metal in the trench. Spin-coating is used for this so that only the trench gets filled. After CMP, any residue of this material is removed, leaving behind a surface that has been planarized to the intended extent without the introduction of significant dishing and with minimum erosion of the metal.
申请公布号 US6383935(B1) 申请公布日期 2002.05.07
申请号 US20000687162 申请日期 2000.10.16
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 LIN CHENG CHUNG;YU CHEN HUA;SHIH TSU;CHANG WENG
分类号 H01L21/321;H01L21/768;(IPC1-7):H01L21/476;H01L21/302;H01L21/44 主分类号 H01L21/321
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