发明名称 |
Method of reducing dishing and erosion using a sacrificial layer |
摘要 |
Chemical mechanical polishing (CMP) is known to cause dishing when the surface being planarized includes a wide trench partially filled with metal. This problem has been overcome by first filling the trench with a material whose polishing rate under CMP is similar to that of the metal in the trench. Spin-coating is used for this so that only the trench gets filled. After CMP, any residue of this material is removed, leaving behind a surface that has been planarized to the intended extent without the introduction of significant dishing and with minimum erosion of the metal.
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申请公布号 |
US6383935(B1) |
申请公布日期 |
2002.05.07 |
申请号 |
US20000687162 |
申请日期 |
2000.10.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LIN CHENG CHUNG;YU CHEN HUA;SHIH TSU;CHANG WENG |
分类号 |
H01L21/321;H01L21/768;(IPC1-7):H01L21/476;H01L21/302;H01L21/44 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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