发明名称 |
Method for producing a microelectronic semiconductor component |
摘要 |
The invention relates to a method for producing a microelectronic semiconductor component, especially made of silicon carbide. According to said method doped areas are produced in the semiconductor by ion implantation and radiation damage in the semiconductor is then eliminated by irradiation with electromagnetic rays. The semiconductor is exposed across substantially its entire surface to pulse-like optical radiation and heated at least in the doped area.
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申请公布号 |
US6383902(B1) |
申请公布日期 |
2002.05.07 |
申请号 |
US20000623045 |
申请日期 |
2000.03.13 |
申请人 |
DAIMLERCHRYSLER AG |
发明人 |
NIEMANN EKKEHARD;PANKNIN DIETER;SKORUPA WOLFGANG;WIRTH HANS |
分类号 |
H01L21/265;H01L21/04;H01L21/268;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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