发明名称 Quartz wafer processing chamber
摘要 Described herein is a process chamber with a substantially all-quartz interior surface. The preferred embodiments have upper and lower walls being curved in both the x-z and y-z planes. In one embodiment, the chamber has thin upper and lower dome walls made from a generally transparent material such as quartz, each with a convex exterior surface and a concave interior surface. These walls are joined at their side edges to a cylindrical side wall, preferably formed from a generally translucent material such as bubble quartz. The upper and lower walls and the side wall substantially enclose an all-quartz interior surface, except for apertures used for gas inlet and outlet, wafer intrusion and extraction and wafer retention. An internal reinforcement extends along the entire interior perimeter of the chamber to provide additional strength and support to the chamber. An external reinforcement surrounds the cylindrical side wall to confine outward expansion of the chamber. In another embodiment, the chamber has upper and lower dome walls that are curved along both their longitudinal and lateral axes, the walls being substantially rectangular when viewed from above.
申请公布号 US6383330(B1) 申请公布日期 2002.05.07
申请号 US19990394372 申请日期 1999.09.10
申请人 ASM AMERICA, INC. 发明人 RAAIJMAKERS IVO
分类号 C23C16/44;C23C16/458;C23C16/48;H01L21/00;(IPC1-7):H01L21/00 主分类号 C23C16/44
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