| 发明名称 |
MRAM device including offset conductors |
| 摘要 |
A Magnetic Random Access Memory (MRAM) device includes an array of cells; and a plurality of first conductors on a first side of the array. The first conductors extend in a first direction and are offset from at least some of the memory cells.
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| 申请公布号 |
US6385083(B1) |
申请公布日期 |
2002.05.07 |
| 申请号 |
US20010920225 |
申请日期 |
2001.08.01 |
| 申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
SHARMA MANISH;BHATTACHARYYA MANOJ |
| 分类号 |
H01L27/105;G11C11/15;H01L21/8246;H01L43/08;(IPC1-7):G11C11/14 |
主分类号 |
H01L27/105 |
| 代理机构 |
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