发明名称 Integrated circuit device with expandable nonvolatile memory
摘要 Disclosed is an integrated circuit device with expandable nonvolatile memory characterized in that a control unit and a voltage generator for memory operation are independently integrated into a common circuit instead of included in each single integrated circuit memory device and shared by at least one integrated circuit memory device. Therefore, multiple circuits such as control urn its and voltage generators and the chip area they occupy in each single integrated circuit memory device are reduced, so that not only the chip size and fabrication cost of the integrated circuit memory devices are decreased, but also the memory capacity is more flexible and adaptive for various applications.
申请公布号 US6385073(B1) 申请公布日期 2002.05.07
申请号 US20000675106 申请日期 2000.09.28
申请人 GC TECHNOLOGY INC.;LAN MICROELECTRONICS CORP. 发明人 YU YUEH-O;TANG CHUN-AN
分类号 G11C16/02;G11C5/02;(IPC1-7):G11C5/02 主分类号 G11C16/02
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