发明名称 |
High speed, low cost BICMOS process using profile engineering |
摘要 |
A bipolar complementary metal oxide semiconductor device has a c-well fabricated using profile engineering (a multi-energy implant using accurate dosages and energies determined by advance simulation) to provide a higher c-well implant dose while creating a narrow region with relatively low concentration in the collector depletion range to avoid low base-collector breakdown. This achieves a much lower collector series resistance to pull-up a frequency response, a collector sheet resistance which can be as low as 150 OMEGA/sq., and fT may be increased to 20 GHz or higher.
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申请公布号 |
US6383855(B1) |
申请公布日期 |
2002.05.07 |
申请号 |
US19980186505 |
申请日期 |
1998.11.04 |
申请人 |
INSTITUTE OF MICROELECTRONICS |
发明人 |
GAO MINGHUI;ZHAO HAIJUN;BANDYOPADHYAY ABHIJIT;FOO PANG DOW |
分类号 |
H01L21/8249;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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