发明名称 |
Manufacturing method for semiconductor device |
摘要 |
A manufacturing method for a semiconductor device, wherein a polyimide-based resin layer is covered with a P-CVD oxide silicon film or the like before it is subjected to degassing process in order to prevent blisters or cracks of a cover film of a semiconductor device which has the polyimide-based resin layer as an interlayer insulating film. This makes it possible to take the semiconductor device out in open air after the degassing process and to prevent the dispersion of reaction products resulting from amidation during the degassing process.
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申请公布号 |
US6384483(B1) |
申请公布日期 |
2002.05.07 |
申请号 |
US19990472431 |
申请日期 |
1999.12.27 |
申请人 |
NEC CORPORATION |
发明人 |
IGARASHI KINICHI;SATO HIDEAKI |
分类号 |
H01L21/312;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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