发明名称 |
Semiconductor integrated circuit device |
摘要 |
In a semiconductor integrated circuit in which an internal voltage generation circuit operating on a power supply voltage supplied through an external terminal forms either or both of a low voltage and a boosted voltage to operate internal circuits, a first internal circuit operating on the power supply voltage supplied through the external terminal or the boosted voltage formed by the internal voltage generation circuit is constituted by a first MOSFET with a gate insulation film having a large thickness adapted to the power supply voltage or boosted voltage, and a second internal circuit operating on the low voltage is constituted by a second MOSFET with a gate insulation film having a small thickness adapted to the low voltage.
|
申请公布号 |
US6385118(B2) |
申请公布日期 |
2002.05.07 |
申请号 |
US20010907929 |
申请日期 |
2001.07.19 |
申请人 |
HITACHI, LTD.;HITACHI DEVICE ENGINEERING CO., LTD. |
发明人 |
FUJISAWA HIROKI;KAJIGAYA KAZUHIKO;FUKUI KENICHI;TACHIBANA TOSHIKAZU |
分类号 |
H01L21/8242;G11C5/14;G11C11/407;H01L27/108;(IPC1-7):G11C7/00 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|