| 发明名称 |
Semiconductor device having improved parasitic capacitance and mechanical strength |
| 摘要 |
A cavity structure formed in a semiconductor substrate and under a device formation region on which a device if formed. The cavity structure has supporting pillars providing the device formation region with mechanical strength.
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| 申请公布号 |
US6383889(B2) |
申请公布日期 |
2002.05.07 |
| 申请号 |
US20010876998 |
申请日期 |
2001.06.11 |
| 申请人 |
NEC CORPORATION |
发明人 |
YOSHIDA HIROSHI |
| 分类号 |
H01L21/822;H01L21/02;H01L27/04;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/822 |
| 代理机构 |
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