| 摘要 |
A method of fabricating a semiconductor device, capable of forming a pattern more finely and more variously without depending on the performance of an exposing device. Aluminum is vapor deposited on a spacer film from an oblique direction to form a metal film etching guard. Specifically, Al is vapor deposited from a direction inclined from the direction of the normal line of the surface of the spacer film by 85° (angle of vapor deposition). For example, when the depth of a recess is 0.10 mum and the opening width is 0.4 mum, Al is not vapor deposited on the bottom surface of the recess. After performing anisotropic etching on the spacer film by using the metal film etching guard as a mask, the metal film etching guard is removed. A gate electrode is formed in the recess.
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