| 摘要 |
A finished structure (100) includes a semiconductive region (102), a first oxide layer (106), a second oxide layer (108), and a conductive layer (110). The first oxide layer (106) lies between the semiconductive region (102) and the second oxide layer (108); and the second oxide layer (108) lies between the first oxide layer (106) and the conductive layer (110). The first oxide layer (106) includes at least a portion that is amorphous or includes a first element, a second element, and a third element. In the latter, the first element is a metallic element, and each of the first, second, and third elements are different from each other. A process for forming a structure (100) includes forming a first layer (106) near a semiconductive region (102), forming a second layer (108) after forming the first layer (106), and forming a third layer (110) after forming the second layer (108). The first oxide layer (106) includes a metallic element and oxygen. The third layer (110) is a non-insulating layer.
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