| 摘要 |
A method for engraving a thin dielectric layer laid on a semiconductor substrate (100) consists of: (a) producing a configuration of engraving motifs (200); (b) producing a selective interaction between some ions (10); and (c) selectively absorbing by neutralization occurring between the ions of the beam and the mask facing these ions. A method for engraving a thin dielectric layer laid on a semiconductor substrate (100) consists of: (a) producing a configuration of engraving motifs (200) through a mask formed on the dielectric layer (101) by insulation with deep or extreme ultraviolet radiation and revelation of a photosensitive resin (102) making up the mask; (b) producing a selective interaction between some ions (10), from a beam of positive multicharged decelerated ions, and the dielectric layer that is visible following the revelation, the beam of a predetermined density ejects from this layer some grains of material (12) and forms them into zones (111) conforming to the motifs of the mask; and (c) selectively absorbing by neutralization occurring between the ions of the beam and the mask facing these ions. |
