METHOD FOR FORMING WORD LINE OF FLASH MEMORY DEVICE

摘要

PURPOSE: A method for forming a word line of a flash memory device is provided to improve an operating speed by smoothing a seam of a tungsten silicide. CONSTITUTION: An isolation layer(22) is formed on a semiconductor substrate(21). A tunnel oxide layer(23) and the first polysilicon layer(24) are formed on a whole surface of the above structure. A photoresist layer is formed on the first polysilicon layer(24). An incline profile pattern is formed by etching the first polysilicon layer(24) and the tunnel oxide layer(23). The patterned photoresist layer is removed. A dielectric layer(26), the second polysilicon layer(27), and a tungsten silicide layer(28) are formed sequentially on the whole surface of the above structure. A control gate is formed by patterning the tungsten silicide layer(28), the second polysilicon layer(27), and the dielectric layer(26). A floating gate is formed by etching the first polysilicon layer(24) and the tunnel oxide layer(23). A word line is formed by laminating the floating gate and the control gate.