| 摘要 |
PURPOSE: A flash memory device and a method for programming the same are provided to select the number of programmable memory according to the amount of leakage current through a bit line. CONSTITUTION: A memory cell array(1) is formed with a multitude of memory cell between a bit line(B/L) and a word line(W/L) by a matrix method. A leakage sense portion(2) is operated by the first enable signal(EN1). The leakage sense portion(2) is used for sensing the amount of leakage current of each bit line according to an input of an address. A column selection portion(3) is operated by the first enable signal(EN1). The column selection portion(3) is used for selecting bit line of programmable number according to the amount of current sensed by the leakage sense portion(2). A column multiplexer(4) receives an output signal of the column selection portion(3) and the address and decodes the received address. A pump and regulator(5) is operated by the second enable signal(EN2). The pump and regulator(5) supplies a bias voltage to the selected bit line.
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