| 摘要 |
PURPOSE: A CMOS composite transistor is provided to allow of a low voltage operation and achieve an increased operating area by reducing threshold voltage of composite transistor. CONSTITUTION: A CMOS composite transistor comprises four MOS transistors and three bias current sources. The two bias current sources connected to the voltage have the same size, and the bias current source connected to a ground wire has a size two times larger than the other two bias current sources. A first NMOS transistor has a gate to be used as an input terminal of the composite transistor, and a drain current to be used as an output current of the composite transistor. A first PMOS transistor has a gate to be used as an input terminal of the composite transistor, and a drain current to be used as an output current of the composite transistor. The drain current of the first NMOS transistor is the same as the drain current of the first PMOS transistor. A second NMOS transistor has a drain and a gate which are connected to the same node. The drain of the second NMOS transistor is connected to the bias current source connected to the voltage. The second NMOS transistor has a source connected to the bias current source connected to the source of the first NMOS transistor and ground. A second PMOS transistor has a gate connected to the drain of the second NMOS transistor, and a drain connected to the bias current source connected to the source of the second NMOS transistor, source of the first NMOS transistor, and the ground wire. The second PMOS transistor has a source connected to the bias current source connected to the source of the first PMOS transistor and voltage.
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