METHOD FOR FABRICATING CELL OF FLASH MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a cell of a flash memory device is provided to reduce an interval between neighboring floating gate electrodes to a limit of an etch process and form a flash memory cell having a floating gate electrode without an etching damage and a stepped portion. CONSTITUTION: The first conductive layer is formed on a semiconductor substrate(50). A protective layer is formed on the first conductive layer. A photo-resist etch mask pattern is formed on the protective layer. A spacer formation layer is formed on the protective layer and the protective layer pattern. A spacer is formed by etching back the spacer formation layer. The protective layer pattern and the spacer are removed. The first conductive pattern is doped on the semiconductor substrate(50). An interlayer dielectric and the second conductive layer are formed sequentially on the first conductive pattern. A photo-resist mask pattern is formed thereon. A control gate electrode(68a), a dielectric layer(66a), and a floating gate electrode(56c) are formed by patterning the second conductive layer, the interlayer dielectric, and the first conductive pattern. A source region and a drain region are formed by performing an ion implant process.