| 摘要 |
PURPOSE: Provided is an etching liquid composition for transparent conductive film, which is used for pattern etching of the transparent conductive film in process for producing a liquid crystal display device in thin film transistor. CONSTITUTION: The etching liquid composition consists of MHSO4(M = K, Na or NH4) as a main reactant, additives and water. The content of MHSO4 is 0.1-20wt.%. The additives are at least one selected from KMnO4, H2O2, H2SO4, M2S2O8(M = K, Na or NH4), MHSO5(M = K, Na or NH4), HNO3, HClO4, KClO4, HlO4 and KlO4. The amount of added additives is 0.1-30wt.%. The etching liquid composition eliminates the phenomenon that a thin film other than the transparent conductive film is etched, and thus improves a processing yield.
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