| 摘要 |
PURPOSE: A contact plug formation method of semiconductor devices is provided to remove a bottom CD(Critical Dimension) variation of contact holes by forming a polysilicon for plug after a nitride spacer is formed at both sidewalls of word lines. CONSTITUTION: Word line patterns(43) having a cap layer(44), a source and a drain region(45,46) are sequentially formed on a semiconductor substrate(41). After forming a nitride spacer(47a) at both sidewalls of the word line patterns, a polysilicon layer is formed on the resultant structure. A sacrificial insulating pattern is formed to define a storage node and a data line contact hole. After filling a polysilicon into the contact holes and removing the sacrificial insulating pattern, isolated contact plugs(52) are formed by removing the exposed polysilicon layer. An interlayer dielectric(53) is then formed on the resultant structure.
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