| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to prevent a surface of a lower electrode from being rough and thereby to improve surface properties and resultant electrical characteristics. CONSTITUTION: An interlayer dielectric layer(2) having a contact hole is formed on a semiconductor substrate(1). In the contact hole, a contact plug(3) is formed of a polysilicon layer(3a), an ohmic contact layer(3b) and a diffusion barrier(3c). Next, a cap insulating layer(4) is formed on a resultant entire structure and selectively etched to produce a hole exposing the contact plug(3). All surfaces are then pretreated with surfactant or catalyst preferably using halogen gases, liquids or their compound. Next, the lower electrode(5) is formed in the hole and then a dielectric layer(6) and an upper electrode(7) are formed thereon. The surfactant increases a two-dimensional growth of the lower electrode(5) such as ruthenium, so that a degree of surface roughness is improved.
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