发明名称 LIGHT EMITTING DEVICE
摘要 PURPOSE: A light emitting device is provided to reduce consumption power and costs by improving the structure. CONSTITUTION: After performing an anodization processing for a metal film(101) formed on a substrate(100) in a weak acid solution having suitable dissolving power, such as sulfuric acid, phosphoric acid, oxalic acid, chromic acid, a porous oxide film is produced. An oxide film(102) is an aggregate of cells(104) having pores(103) vertical to the metal film(101) and made from a porous layer(102a) and a semicircular barrier layer(102b) which is present in bottom portions of the pores(103). At this time, the anodization is performed with a constant voltage, a voltage is applied to the barrier layer(102b). Thus, the oxide film is produced and simultaneously dissolved in the barrier layer(102b). In this case, while the thickness of the barrier layer(102b) is kept constant, it progresses in a thickness direction of the oxide film with the lapse of the voltage applying time. That is, the thickness of the porous layer(102a) is increased with the lapse of the voltage applying time.
申请公布号 KR20020032406(A) 申请公布日期 2002.05.03
申请号 KR20010066288 申请日期 2001.10.26
申请人 SEMICONDUCTOR ENERGY LABORATORY K.K. 发明人 SEO SATOSHI
分类号 H05B33/14;H01L51/50;H01L51/52 主分类号 H05B33/14
代理机构 代理人
主权项
地址