发明名称 SEED LAYER DEPOSITION
摘要 PURPOSE: A method of depositing substantially continuous seed layers is provided to conform to surface geometries in electronic devices, particularly in devices having very small geometries such as 0.5 micron and below. CONSTITUTION: A method for depositing a seed layer includes the steps of: contacting a substrate having a conductive layer and apertures of <=1 mum with an electroless copper plating bath; subjecting the substrate to a low current density for a period of time to initiate plating of copper on the conductive layer; discontinuing the current; and continuing to plate electrolessly to provide a copper seed layer.
申请公布号 KR20020032348(A) 申请公布日期 2002.05.03
申请号 KR20010065624 申请日期 2001.10.24
申请人 SHIPLEY COMPANY, L.L.C. 发明人 DUTKEWYCH OLEH B.;MERRICKS DAVID;SHELNUT JAMES G.;SHIPLEY CHARLES R.
分类号 C23C18/40;C23C18/16;C23C18/18;C23C28/00;H01L21/288;H05K3/18;H05K3/38;H05K3/42;(IPC1-7):H01L21/288 主分类号 C23C18/40
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