| 摘要 |
PURPOSE: A formation method of fuses and interconnections is provided to simplify a lay-out of semiconductor devices by simultaneously forming a metal interconnection and a metal fuse having different thickness. CONSTITUTION: A first insulation layer(21) is formed on a substrate(20) having a fuse region(MF) and an interconnection region(ML). By depositing and patterning a multi-layered metal film on the first insulation layer(21), a first and a second interconnections(22,23) are formed in the fuse region(MF) and a third and a fourth interconnections(24,25) are formed in the interconnection region(ML). A first, a second, a third and a fourth plugs(270,271,272,273) are connected to the interconnections(22,23,24,25) by filling a metal into via holes formed after depositing and patterning a second insulation layer(26) on the first insulation layer(21). A seed layer(281,291) made of a Ti layer(281) and Cu layer(291) is formed on the resultant structure and a third insulation layer is deposited on the Cu layer(291). A fuse mask(300) made of the remaining third insulation layer is formed between the first and second interconnections(22,23) by using a first photoresist pattern. A first, a second and a third plating layers(330,331,332) composed of a Cu are formed by performing an electroplating on the exposed Cu layer(291) using a second photoresist pattern as an electroplating mask. After removing the second photoresist pattern, the second insulation layer(26) is selectively exposed by a dry etching using the plating layers(330,331,332) and the fuse mask(300) as an etching mask. After forming a fourth and a fifth insulation layers(34,35) and a third photoresist pattern(36), a fuse part made of the fourth insulation layer(34) and the fuse mask(300) and a thick interconnection made of the third plating layers(332) are simultaneously formed.
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