| 摘要 |
PURPOSE: A semiconductor memory device and a method for write drive of the same are provided to prevent a lowering phenomenon of a pull-up drive power of a sense amplifier due to reduction of a cell supply voltage. CONSTITUTION: A sense amplifier(48) is used for driving a bit line of a memory cell(49) by using a pull-up power source and a pull-down source. A sense amplifier power driver portion(46) is used for providing the pull-up power source and the pull-down power source to the sense amplifier(48). A sense amplifier power drive control portion(44) is used for generating the first and the second pull-up control signals(Pu1,Pu2) and a pull-down control signal(Pd) for controlling the sense amplifier power driver portion(46) in response to a low address strobe signal and a write command. A write drive portion(42) is used for driving an input stage of the sense amplifier(48) in response to the write command.
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