| 摘要 |
PURPOSE: A semiconductor device using an interlayer dielectric having a flow property is provided to prevent electric fails due to a shift of conductive metal lines by using dummy contact patterns. CONSTITUTION: A plurality of conductive metal lines(30) having constant distance are formed on an interlayer dielectric having a flow property, such as BPSG(BoroPhospho Silicate Glass), PSG or BSG. A plurality of metal contacts(31) are arranged at one side of the conductive metal lines(30). At this time, the metal contacts(31) are formed by dummy contact patterns, thereby preventing electric fails due to the shift of the conductive metal lines(30).
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