METHOD FOR DETECTING MICRO-DEFECT OF SEMICONDUCTOR WAFER

摘要

PURPOSE: A detection method of micro-defects is provided to improve the reliability by detecting micro-defects generated from an inner area and a surface of a wafer. CONSTITUTION: A thermal treatment is firstly performed on a wafer to grow micro-defects to the detectable size at the temperature of 500-1300 deg.C under N2 + O2 gas atmosphere. By this step, the micro-defects are easily detectable. Then, an oxide etching step is secondly performed. A polishing step is thirdly performed on the surface of the wafer. Then, a cleansing step is fourthly performed on the resultant structure. A micro-defects detection step is lastly performed using a particle counter. The thermal treatment consists of two-steps, such as a first annealing at the temperature of 650-800 deg.C for 2 hours or more in order to form an atomic nucleus by oxygen in the wafer and a second annealing at the temperature of 900-1200 deg.C for 10 hours or more so as to extract the oxygen from the wafer.