METHOD FOR FORMING SILICATE USING ALD

摘要

PURPOSE: A silicate formation method is provided to improve a step coverage and to prevent a degradation of GOI(Gate Oxide Integrity) by forming an Hf silicate using an ALD(Atomic Layer Deposition). CONSTITUTION: An Hf is deposited on a silicon wafer(10) by ALD due to a surface saturation mechanism using HfCl4 as the Hf source. An HfO2 is formed by injecting H2O or O3 and reacting the Hf. An Hf silicate(HfSixOy) is formed by injecting silicon compounds, such as SiH4, Si2H6 or SiCl2H2. Then, annealing process is performed to densify the Hf silicate.