HIGH DENSITY PLASMA OXIDE ETCHING APPARATUS

摘要

PURPOSE: A plasma oxide etching apparatus is provided to deeply etch a wafer including a deep contact by generating a high density plasma. CONSTITUTION: Radio frequency(RF) signal generators(211,212) generate different radio frequencies(RF) in order to respectively supply the frequencies to an upper and a lower electrodes(202,204) of a chamber(200) for forming a high density plasma. Frequency of 27.2 MHz is provided to the upper electrode(202) by the radio frequency generator(211) through a radio frequency matching network(213) and frequency of 2 MHz is supplied to the lower electrode(204) by the radio frequency generator(212) through another radio frequency matching network(214). An exhaust buffer part(215) connected to an exhaust pipe(208) moderately controls an exhaust instantaneous velocity of waste gases from the chamber(200).