发明名称 |
A material with a low volume resistivity, aluminium nitride sintered body and article for manufacturing semiconductors |
摘要 |
<p>A material with a low volume resistivity at room temperature composed of an aluminum nitride sintered body is provided. The sintered body contains samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent, and the sintered body contains aluminum nitride phase and samarium-aluminum complex oxide phase. The samarium-aluminum complex oxide phase forms intergranular layers with a low resistivity along the intergranular phase between aluminum nitride grains.</p> |
申请公布号 |
EP1201622(A2) |
申请公布日期 |
2002.05.02 |
申请号 |
EP20010308980 |
申请日期 |
2001.10.23 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
KATSUDA, YUJI;YOSHIKAWA, JUN;MASUDA, MASAAKI;IHARA, CHIKASHI |
分类号 |
C04B35/581;H01L21/683;(IPC1-7):C04B35/581;H01L21/68 |
主分类号 |
C04B35/581 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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