| 摘要 |
<p>A semiconductor device (10) having a light-receiving function and comprising a semiconductor element (1) of p-type silicon single crystal, first and second flat faces (2, 7), an n-type diffusion layer (3), a pn junction (4) thereof, a recrystallization layer (8), an antireflection film (6a), an negative electrode (9a), and a positive electrode (9b). A columnar semiconductor element may be applied in place of the semiconductor element (1).</p> |
