USING DEUTERATED SOURCE GASES TO FABRICATE LOW LOSS GeSiON SiON WAVEGUIDES
摘要
The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a CVD process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.
申请公布号
WO0235265(A2)
申请公布日期
2002.05.02
申请号
WO2001US42290
申请日期
2001.09.25
申请人
CORNING INCORPORATED
发明人
AKWANI, IKERIONWU, A.;BELLMAN, ROBERT, A.;GRANDI, THOMAS, P.;SACHENIK, PAUL, A.