发明名称 USING DEUTERATED SOURCE GASES TO FABRICATE LOW LOSS GeSiON SiON WAVEGUIDES
摘要 The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a CVD process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.
申请公布号 WO0235265(A2) 申请公布日期 2002.05.02
申请号 WO2001US42290 申请日期 2001.09.25
申请人 CORNING INCORPORATED 发明人 AKWANI, IKERIONWU, A.;BELLMAN, ROBERT, A.;GRANDI, THOMAS, P.;SACHENIK, PAUL, A.
分类号 C03C17/22;C03C17/34;C23C16/30;G02B6/122;G02B6/132 主分类号 C03C17/22
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