发明名称 |
Light receiving device with built-in circuit |
摘要 |
A photodiode converts light incident thereon into an electric signal by a junction between an N-type epitaxial layer and a P-type epitaxial layer with a sufficiently small junction capacitance. The photodiode is surrounded by a P+-type buried isolating diffused layer and a P-type isolating diffused layer, and thus is electrically separated from a signal processing circuit including a MOS transistor.
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申请公布号 |
US2002050593(A1) |
申请公布日期 |
2002.05.02 |
申请号 |
US20010984298 |
申请日期 |
2001.10.29 |
申请人 |
FUKUNAGA NAOKI;NATSUAKI KAZUHIRO |
发明人 |
FUKUNAGA NAOKI;NATSUAKI KAZUHIRO |
分类号 |
H01L21/761;H01L27/14;H01L27/146;H01L31/10;(IPC1-7):H01L31/109;H01L31/072;H01L31/033;H01L31/20;H01L31/037;H01L31/036 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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