| 摘要 |
The surface cleaning method of semiconductor substrate comprises, the steps of, immersing a substrate of a first conductive type having Ge or SiGe mixing Ge and Si at least in the surface layer in a solution of hydrofluoric acid, and removing foreign matters from the surface of the substrate without overetching the surface of the substrate, pouring pure water on the substrate to wash away the solution of hydrofluoric acid applied at the step (a) from the surface of the substrate, and immersing the substrate in a solution of hydrogen peroxide, and removing foreign matters from the surface of the substrate without overetching the surface of the substrate.
|
